| 序號 |
正式名稱 |
發明人 |
美國獲證專利 |
台灣獲證專利 |
| 1 |
Memory Unit with Asymmetric Group-Modulated Input Scheme and Current-to-Voltage Signal Stacking Scheme for Non-Volatile Computing-in-Memoery Applications and Computing Method Thereof |
薛承昕、高暉曜、黃聖博、黃彥翔、張孟凡 |
Issue date 07/19/2022 and Patent No 17/148,504 |
|
| 2 |
Method and System of Revising a Layout Diagram |
王廷基/麥偉基 |
Issue date 9/15/2020 and Patent No 10,776,551 |
|
| 3 |
Laminated HfO2-HfxTi1-xO2-HfO2 Structure as Novel High-k Dielectric for Nanoelectronics |
巫勇賢 |
Issue date 9/4/2018 and Patent No US10,068,984 |
Issue date 3/21/2018 and accorded No I619176 |
| 4 |
Green Flash Memory Based on diode-like or BJT-like Charge Trapping Layer |
巫勇賢 |
Issue date 9/4/2018 and Patent No US10,068,984 |
|
| 5 |
FinFET Contact Slot Coupling Gate MTP |
林崇榮 |
Issue date 4/30/2019 and Patent No US10,276,726B2 |
|
| 6 |
乾式蝕刻(Dry-etch)形成溝槽式(Trench)超薄主動層(UTB)無接面式電晶體(JL FinFET) |
吳永俊 |
Issue date 4/11/2017 and Patent No 9,620,645 |
Issue date 3/21/2018 and accorded No I619167 |
| 7 |
Nano-twin modified Cu Interconnect for BEOL Reliability Improvement |
廖建能 |
Issue date 9/12/2017 and Patent No 9,761,523 |
|
| 8 |
Advanced Semiconductor Devices with Stacking gate dielectric |
巫勇賢 |
Issue date 2/14/2017 and Patent No 9,570,568 |
Issue date 6/21/2017 and accorded No I588993 |
| 9 |
A novel memory structure for OTP memory and RRAM application |
金雅琴/林崇榮 |
Issue date 10/2/2018 and Patent No 10,090,360 |
Issue date 6/1/2018 and accorded No I625857 |