全球專利佈局
序號 | 正式名稱 | 發明人 | 美國獲證專利 | 台灣獲證專利 |
1 | Memory Unit with Asymmetric Group-Modulated Input Scheme and Current-to-Voltage Signal Stacking Scheme for Non-Volatile Computing-in-Memoery Applications and Computing Method Thereof | 薛承昕、高暉曜、黃聖博、黃彥翔、張孟凡 | Issue date 07/19/2022 and Patent No 17/148,504 | |
2 | Method and System of Revising a Layout Diagram | 王廷基/麥偉基 | Issue date 9/15/2020 and Patent No 10,776,551 | |
3 | Laminated HfO2-HfxTi1-xO2-HfO2 Structure as Novel High-k Dielectric for Nanoelectronics | 巫勇賢 | Issue date 9/4/2018 and Patent No US10,068,984 | Issue date 3/21/2018 and accorded No I619176 |
4 | Green Flash Memory Based on diode-like or BJT-like Charge Trapping Layer | 巫勇賢 | Issue date 9/4/2018 and Patent No US10,068,984 | |
5 | FinFET Contact Slot Coupling Gate MTP | 林崇榮 | Issue date 4/30/2019 and Patent No US10,276,726B2 | |
6 | 乾式蝕刻(Dry-etch)形成溝槽式(Trench)超薄主動層(UTB)無接面式電晶體(JL FinFET) | 吳永俊 | Issue date 4/11/2017 and Patent No 9,620,645 | Issue date 3/21/2018 and accorded No I619167 |
7 | Nano-twin modified Cu Interconnect for BEOL Reliability Improvement | 廖建能 | Issue date 9/12/2017 and Patent No 9,761,523 | |
8 | Advanced Semiconductor Devices with Stacking gate dielectric | 巫勇賢 | Issue date 2/14/2017 and Patent No 9,570,568 | Issue date 6/21/2017 and accorded No I588993 |
9 | A novel memory structure for OTP memory and RRAM application | 金雅琴/林崇榮 | Issue date 10/2/2018 and Patent No 10,090,360 | Issue date 6/1/2018 and accorded No I625857 |